Improved Output ESD Protection By Dynamic Gate Floating Design - Electron Devices, IEEE Transactions on

نویسندگان

  • J. S. Byun
  • H. B. Jeon
  • K. H. Lee
  • Hun-Hsien Chang
  • Ming-Dou Ker
چکیده

A dynamic gate floating design is proposed to improve ESD robustness of the CMOS output buffers with small drive capability. By using this novel design, the human-body-model (machine-model) ESD failure threshold of a 2-mA CMOS output buffer has been practically improved from 1 KV (100 V) to greater than 8 KV (1500 V) in a 0.35m CMOS process.

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تاریخ انتشار 1998